This process involves the prior deposition or co-deposition of small amounts of catalysts by CVD to facilitate the OMCVD process. This method allows for a relatively low temperature (100 - 200 C) thin film deposition of various metals to be made on a variety of electronic materials such as III/V-semiconductors, thin film dielectrics, organic polymers and assembled solid state circuits and microchips. The films formed are crystalline and of exceptional purity, with improved electrical and physical properties. This technology will bring greater flexibility to OMCVD processes for the VLSI manufacture of integrated microelectronic circuits and new discrete devices.

Reference: UCLA Case No. 1992-517

US Patent Number: 5,403,620