A NOVEL MECHANISM FOR SEMICONDUCTOR GAMMA-RAY DETECTOR APPLICATIONS
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UCLA Technology Available For Licensing |
UCLA Researchers in the Materials Science & Engineering Department have developed a novel mechanism for gamma-ray (γ-ray) and x-ray detection using semiconductor detectors, enabling room temperature operation and potentially high energy resolution.
BACKGROUND:
Known γ-ray detectors include optical scintillation-based and electrical semiconductor-based γ-ray detectors. Scintillation-based detectors can be bulky. Although semiconductor-based detectors offer many advantages over scintillation-based detectors, known semiconductor-based detectors suffer from large leakage currents. This results in prohibitively high dark current, which requires cumbersome cryogenic operation to facilitate detection. Furthermore, the semiconductor materials must have extremely low ionized impurity concentrations for complete γ-ray absorption. This severely limits the range of applications these detectors can be used for.
INNOVATION:
The novel mechanism is based on a novel nano/micro composite material. It enables room temperature operation under much reduced voltage, and promises improved energy resolution. By eliminating the need for thick detection semiconductors and bulky cryogenic operation, the design enables improved portability.
POTENTIAL APPLICATIONS
- Providing service where cryogenic and high voltage infrastructures are not accessible
- Deterring potential terrorist attacks and improving homeland security
- Screening a large number of cargo containers traveling through ports
ADVANTAGES
- Optimizes detector signal-to-noise ratio for room temperature operation
- Expands significantly the parameter space for structural optimization of the semiconductor detectors with respect to all key performance metrics
- Enables high resolution detection with an order-of-magnitude lower bias voltage
- Resists radiation damage by maintaining immunity to carrier trapping
DEVELOPMENT-TO-DATE:
The mechanism is in the conceptual stage, pending simulation and testing.
Reference: UCLA Case No. 2007-003
For additional technical details and current licensing availability,
please contact the following UCLA office:
UCLA Office of Intellectual Property
11000 Kinross Avenue, Suite #200
Los Angeles, CA 90095-7231
Tel: 310-794-0558 Fax: 310-794-0638
email: ncd@research.ucla.edu
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NCD URL: http://www.research.ucla.edu/tech/ucla07-003.htm
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UCLA Technologies Available for
Licensing
http://www.research.ucla.edu/oipa/industry
Copyright © 2006 The Regents of the
University of California.
keywords: gamma ray, γ-ray, x-ray, detector, detection, high energy, electrons, photons, high Z, photoelectric absorption, Compton scattering, pair production, attenuation, resolution, collection, electron-hole pair, depletion width, carrier trapping, radiation damage, bandgap, leakage
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